High Density Plasma Etching System for Magnetic Materials

Metal, oxide, magnetic materials etching

Special Features

TCP etching system for R&D and small scale production.
Automatic robot transporting system.
Mechanical chuck and He backside cooling system.

Specifications

Average throughput : Up to 14,400 wafers per year
Wafer capacity : 1 × 4"
Dimension : 1,100L × 1,830H × 900W (mm3)
Power : RF 1kW for TCP source
RF 600W for bias voltage
Gas : C2F6 / He / SF6 / B6H6 / Cl2/Ar
Substrate material : Si/SiO2
Pump : Rrotary(450l/min, 900l/min) & Turbo(500l/s)