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ICP CVD system for Graphene and Boron Carbide Layers

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A-Tech System
[Korea]

Address
175-25 Cheongcheon-Dong 2, Bupyeong-Gu, Incheon, 403-853, Rep. Korea Incheon Incheon
Phone
82-32-5088067
Contact name
Yoon Choi

Quick Information

  • Place of Origin: Korea
  • Model Number : PECVD Lab 200

Description

Graphene synthesis

Special Features

Multi-functional CVD system combined with ICP CVD and probe station.
Maximum substrate temperature: 1,000°C.
Automatic loading available during susceptor heating.
High density plasma source.
PC-control system.

Specifications

Wafer capacity : 6" wafer x 1
Average throughput: 4,800 wafer/year
Dimension : 1,500W × 1,800D × 1,830H (mm3)
Power : ICP Power supply
Bias power supply
Heater : Heating element - SiC coated graphite(max. temp.:1,200°C)
Gas : Ar/CH4/H2/B2H2/C2H2/O2/N2/NH3
Pump : dry pump, turbo pump, booster pump


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  • ICP CVD system for Graphene and Boron Carbide Layers image

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